IPW60R090CFD7XKSA1 Pricing (USD) [11588pcs Stock]
- 1 pcs$3.55645
- Part Number:
- IPW60R090CFD7XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPW60R090CFD7XKSA1 electronic components. IPW60R090CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R090CFD7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R090CFD7XKSA1 Product Attributes
Part Number :
IPW60R090CFD7XKSA1
Manufacturer :
Infineon Technologies
Description :
HIGH POWERNEW
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2103pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO247-3
Package / Case :
TO-247-3
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