Infineon Technologies - IPB65R065C7ATMA1

KEY Part #: K6401864

IPB65R065C7ATMA1 Pricing (USD) [2903pcs Stock]

  • 1,000 pcs$2.12608

Part Number:
IPB65R065C7ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPB65R065C7ATMA1 electronic components. IPB65R065C7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R065C7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R065C7ATMA1 Product Attributes

Part Number : IPB65R065C7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO263-3
Series : CoolMOS™ P6
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 557pF @ 100V
FET Feature : -
Power Dissipation (Max) : 171W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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