BSL372SNH6327XTSA1 Pricing (USD) [375135pcs Stock]
- 1 pcs$0.10588
- 3,000 pcs$0.10535
- Part Number:
- BSL372SNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 2A 6TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - RF and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSL372SNH6327XTSA1 electronic components. BSL372SNH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSL372SNH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSL372SNH6327XTSA1 Product Attributes
Part Number :
BSL372SNH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 2A 6TSOP
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
220 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
329pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TSOP-6-6
Package / Case :
SOT-23-6 Thin, TSOT-23-6
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