SSM3J325F,LF Pricing (USD) [1298908pcs Stock]
- 1 pcs$0.03148
- 3,000 pcs$0.03132
- Part Number:
- SSM3J325F,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 20V 2A S-MINI.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J325F,LF electronic components. SSM3J325F,LF can be shipped within 24 hours after order. If you have any demands for SSM3J325F,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J325F,LF Product Attributes
Part Number :
SSM3J325F,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 2A S-MINI
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
600mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
S-Mini
Package / Case :
TO-236-3, SC-59, SOT-23-3
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