PMV280ENEAR Pricing (USD) [603830pcs Stock]
- 1 pcs$0.06126
- 3,000 pcs$0.05384
- Part Number:
- PMV280ENEAR
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 100V 1.1A TO236AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMV280ENEAR electronic components. PMV280ENEAR can be shipped within 24 hours after order. If you have any demands for PMV280ENEAR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV280ENEAR Product Attributes
Part Number :
PMV280ENEAR
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 100V 1.1A TO236AB
Series :
TrenchMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
385 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id :
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
580mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB
Package / Case :
TO-236-3, SC-59, SOT-23-3
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