NXP USA Inc. - BUK652R0-30C,127

KEY Part #: K6415320

[12450pcs Stock]


    Part Number:
    BUK652R0-30C,127
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET N-CH 30V 120A TO220AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
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    We specialize in NXP USA Inc. BUK652R0-30C,127 electronic components. BUK652R0-30C,127 can be shipped within 24 hours after order. If you have any demands for BUK652R0-30C,127, Please submit a Request for Quotation here or send us an email:
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    BUK652R0-30C,127 Product Attributes

    Part Number : BUK652R0-30C,127
    Manufacturer : NXP USA Inc.
    Description : MOSFET N-CH 30V 120A TO220AB
    Series : TrenchMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 25A, 10V
    Vgs(th) (Max) @ Id : 2.8V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 229nC @ 10V
    Vgs (Max) : ±16V
    Input Capacitance (Ciss) (Max) @ Vds : 14964pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 306W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220AB
    Package / Case : TO-220-3