BSO080P03NS3EGXUMA1 Pricing (USD) [220828pcs Stock]
- 1 pcs$0.16749
- 2,500 pcs$0.15670
- Part Number:
- BSO080P03NS3EGXUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 30V 12A 8DSO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSO080P03NS3EGXUMA1 electronic components. BSO080P03NS3EGXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO080P03NS3EGXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO080P03NS3EGXUMA1 Product Attributes
Part Number :
BSO080P03NS3EGXUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 30V 12A 8DSO
Series :
OptiMOS™
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id :
3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
6750pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.6W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-DSO-8
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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