IXYS - IXFN64N50PD2

KEY Part #: K6402641

IXFN64N50PD2 Pricing (USD) [3199pcs Stock]

  • 1 pcs$14.29070
  • 10 pcs$14.21960

Part Number:
IXFN64N50PD2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 500V 52A SOT-227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules and Thyristors - SCRs ...
Competitive Advantage:
We specialize in IXYS IXFN64N50PD2 electronic components. IXFN64N50PD2 can be shipped within 24 hours after order. If you have any demands for IXFN64N50PD2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN64N50PD2 Product Attributes

Part Number : IXFN64N50PD2
Manufacturer : IXYS
Description : MOSFET N-CH 500V 52A SOT-227B
Series : PolarHV™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id : 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 186nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 11000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 625W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC

You May Also Be Interested In
  • BS170PSTOB

    Diodes Incorporated

    MOSFET N-CH 60V 0.27A TO92-3.

  • GP2M005A060CG

    Global Power Technologies Group

    MOSFET N-CH 600V 4.2A DPAK.

  • GP2M005A050CG

    Global Power Technologies Group

    MOSFET N-CH 500V 4.5A DPAK.

  • GP1M016A025CG

    Global Power Technologies Group

    MOSFET N-CH 250V 16A DPAK.

  • GP1M008A050CG

    Global Power Technologies Group

    MOSFET N-CH 500V 8A DPAK.

  • GP1M007A065CG

    Global Power Technologies Group

    MOSFET N-CH 650V 6.5A DPAK.