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  5. FQPF3N80CYDTU

ON Semiconductor - FQPF3N80CYDTU

KEY Part #: K6410670

[14056pcs Stock]

    Part Number:
    FQPF3N80CYDTU
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 800V 3A TO-220F.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQPF3N80CYDTU electronic components. FQPF3N80CYDTU can be shipped within 24 hours after order. If you have any demands for FQPF3N80CYDTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQPF3N80CYDTU Product Attributes

    Part Number : FQPF3N80CYDTU
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 800V 3A TO-220F
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 800V
    Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 4.8 Ohm @ 1.5A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 16.5nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 705pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 39W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220F-3 (Y-Forming)
    Package / Case : TO-220-3 Full Pack, Formed Leads

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