Infineon Technologies - BSC067N06LS3GATMA1

KEY Part #: K6420064

BSC067N06LS3GATMA1 Pricing (USD) [156870pcs Stock]

  • 1 pcs$0.23579
  • 5,000 pcs$0.18053

Part Number:
BSC067N06LS3GATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 50A TDSON-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - RF and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies BSC067N06LS3GATMA1 electronic components. BSC067N06LS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC067N06LS3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC067N06LS3GATMA1 Product Attributes

Part Number : BSC067N06LS3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 50A TDSON-8
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TDSON-8
Package / Case : 8-PowerTDFN

You May Also Be Interested In