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  5. FCI25N60N

ON Semiconductor - FCI25N60N

KEY Part #: K6404629

[1945pcs Stock]

    Part Number:
    FCI25N60N
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 600V 25A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF and Thyristors - SCRs ...
    Competitive Advantage:
    We specialize in ON Semiconductor FCI25N60N electronic components. FCI25N60N can be shipped within 24 hours after order. If you have any demands for FCI25N60N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FCI25N60N Product Attributes

    Part Number : FCI25N60N
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 600V 25A I2PAK
    Series : SupreMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 125 mOhm @ 12.5A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 3352pF @ 100V
    FET Feature : -
    Power Dissipation (Max) : 216W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK (TO-262)
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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