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Microsemi Corporation - APTM120U10SCAVG

KEY Part #: K6412691

APTM120U10SCAVG Pricing (USD) [13357pcs Stock]

  • 100 pcs$133.52545
Part Number:
APTM120U10SCAVG
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET N-CH 1200V 116A SP6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APTM120U10SCAVG electronic components. APTM120U10SCAVG can be shipped within 24 hours after order. If you have any demands for APTM120U10SCAVG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120U10SCAVG Product Attributes

Part Number : APTM120U10SCAVG
Manufacturer : Microsemi Corporation
Description : MOSFET N-CH 1200V 116A SP6
Series : POWER MOS 7®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 58A, 10V
Vgs(th) (Max) @ Id : 5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 1100nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 28900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3290W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SP6
Package / Case : SP6

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