[12706pcs Stock]
- Part Number:
- IRFSL59N10D
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 59A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFSL59N10D electronic components. IRFSL59N10D can be shipped within 24 hours after order. If you have any demands for IRFSL59N10D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL59N10D Product Attributes
Part Number :
IRFSL59N10D
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 59A TO-262
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-262
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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