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  5. FQB4N20LTM

ON Semiconductor - FQB4N20LTM

KEY Part #: K6413602

[13044pcs Stock]

    Part Number:
    FQB4N20LTM
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 200V 3.8A D2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays and Transistors - Programmable Unijunction ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQB4N20LTM electronic components. FQB4N20LTM can be shipped within 24 hours after order. If you have any demands for FQB4N20LTM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQB4N20LTM Product Attributes

    Part Number : FQB4N20LTM
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 200V 3.8A D2PAK
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 3.8A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 1.35 Ohm @ 1.9A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 310pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.13W (Ta), 45W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D²PAK (TO-263AB)
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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