Infineon Technologies - SPP08N50C3XKSA1

KEY Part #: K6413196

SPP08N50C3XKSA1 Pricing (USD) [13183pcs Stock]

  • 1 pcs$0.79857

Part Number:
SPP08N50C3XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 560V 7.6A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies SPP08N50C3XKSA1 electronic components. SPP08N50C3XKSA1 can be shipped within 24 hours after order. If you have any demands for SPP08N50C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPP08N50C3XKSA1 Product Attributes

Part Number : SPP08N50C3XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 560V 7.6A TO-220AB
Series : CoolMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 560V
Current - Continuous Drain (Id) @ 25°C : 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 25V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3-1
Package / Case : TO-220-3