Vishay Siliconix - SI1400DL-T1-E3

KEY Part #: K6408703

SI1400DL-T1-E3 Pricing (USD) [536pcs Stock]

  • 3,000 pcs$0.06811

Part Number:
SI1400DL-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 20V 1.6A SC70-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SI1400DL-T1-E3 electronic components. SI1400DL-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1400DL-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1400DL-T1-E3 Product Attributes

Part Number : SI1400DL-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 20V 1.6A SC70-6
Series : TrenchFET®
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id : 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 568mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70-6 (SOT-363)
Package / Case : 6-TSSOP, SC-88, SOT-363