IRF7807VTRPBF Pricing (USD) [254929pcs Stock]
- 1 pcs$0.14509
- 4,000 pcs$0.13929
- Part Number:
- IRF7807VTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7807VTRPBF electronic components. IRF7807VTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7807VTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807VTRPBF Product Attributes
Part Number :
IRF7807VTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 8.3A 8-SOIC
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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