NTZS3151PT1H Pricing (USD) [13455pcs Stock]
- 8,000 pcs$0.04046
- Part Number:
- NTZS3151PT1H
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V 0.86A SOT563.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTZS3151PT1H electronic components. NTZS3151PT1H can be shipped within 24 hours after order. If you have any demands for NTZS3151PT1H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTZS3151PT1H Product Attributes
Part Number :
NTZS3151PT1H
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V 0.86A SOT563
Series :
-
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
458pF @ 16V
FET Feature :
-
Power Dissipation (Max) :
170mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-563-6
Package / Case :
SOT-563, SOT-666
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