Vishay Siliconix - SI5480DU-T1-E3

KEY Part #: K6408628

[562pcs Stock]


    Part Number:
    SI5480DU-T1-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 30V 12A PPAK CHIPFET.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Special Purpose, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI5480DU-T1-E3 electronic components. SI5480DU-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5480DU-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5480DU-T1-E3 Product Attributes

    Part Number : SI5480DU-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 30V 12A PPAK CHIPFET
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 16 mOhm @ 7.2A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1230pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 3.1W (Ta), 31W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PowerPAK® ChipFet Single
    Package / Case : PowerPAK® ChipFET™ Single