PSMN1R7-30YL,115 Pricing (USD) [161941pcs Stock]
- 1 pcs$0.22840
- 1,500 pcs$0.18749
- Part Number:
- PSMN1R7-30YL,115
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 30V 100A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN1R7-30YL,115 electronic components. PSMN1R7-30YL,115 can be shipped within 24 hours after order. If you have any demands for PSMN1R7-30YL,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN1R7-30YL,115 Product Attributes
Part Number :
PSMN1R7-30YL,115
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 30V 100A LFPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
77.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5057pF @ 12V
FET Feature :
-
Power Dissipation (Max) :
109W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK56, Power-SO8
Package / Case :
SC-100, SOT-669
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