ON Semiconductor - NTMSD3P102R2

KEY Part #: K6412602

[13389pcs Stock]


    Part Number:
    NTMSD3P102R2
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET P-CH 20V 2.34A 8-SOIC.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Thyristors - SCRs and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTMSD3P102R2 electronic components. NTMSD3P102R2 can be shipped within 24 hours after order. If you have any demands for NTMSD3P102R2, Please submit a Request for Quotation here or send us an email:
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    ISO-13485
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    ISO-45001-2018

    NTMSD3P102R2 Product Attributes

    Part Number : NTMSD3P102R2
    Manufacturer : ON Semiconductor
    Description : MOSFET P-CH 20V 2.34A 8-SOIC
    Series : FETKY™
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2.34A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.05A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 16V
    FET Feature : Schottky Diode (Isolated)
    Power Dissipation (Max) : 730mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOIC
    Package / Case : 8-SOIC (0.154", 3.90mm Width)