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  5. NTD23N03RT4G

ON Semiconductor - NTD23N03RT4G

KEY Part #: K6406970

[1136pcs Stock]

    Part Number:
    NTD23N03RT4G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 25V 3.8A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTD23N03RT4G electronic components. NTD23N03RT4G can be shipped within 24 hours after order. If you have any demands for NTD23N03RT4G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTD23N03RT4G Product Attributes

    Part Number : NTD23N03RT4G
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 25V 3.8A DPAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta), 17.1A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 5V
    Rds On (Max) @ Id, Vgs : 45 mOhm @ 6A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 3.76nC @ 4.5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 225pF @ 20V
    FET Feature : -
    Power Dissipation (Max) : 1.14W (Ta), 22.3W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DPAK
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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