IRF9Z34NSTRRPBF Pricing (USD) [143745pcs Stock]
- 1 pcs$0.25731
- 800 pcs$0.24699
- Part Number:
- IRF9Z34NSTRRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 55V 19A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF9Z34NSTRRPBF electronic components. IRF9Z34NSTRRPBF can be shipped within 24 hours after order. If you have any demands for IRF9Z34NSTRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z34NSTRRPBF Product Attributes
Part Number :
IRF9Z34NSTRRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 55V 19A D2PAK
Series :
HEXFET®
Part Status :
Not For New Designs
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 68W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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