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  5. NTLJD3182FZTBG

ON Semiconductor - NTLJD3182FZTBG

KEY Part #: K6407644

[903pcs Stock]

    Part Number:
    NTLJD3182FZTBG
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET P-CH 20V 2.2A 6-WDFN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTLJD3182FZTBG electronic components. NTLJD3182FZTBG can be shipped within 24 hours after order. If you have any demands for NTLJD3182FZTBG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTLJD3182FZTBG Product Attributes

    Part Number : NTLJD3182FZTBG
    Manufacturer : ON Semiconductor
    Description : MOSFET P-CH 20V 2.2A 6-WDFN
    Series : -
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 7.8nC @ 4.5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 10V
    FET Feature : Schottky Diode (Isolated)
    Power Dissipation (Max) : 710mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 6-WDFN (2x2)
    Package / Case : 6-WDFN Exposed Pad

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