RCD100N19TL Pricing (USD) [202426pcs Stock]
- 1 pcs$0.20200
- 2,500 pcs$0.20099
- Part Number:
- RCD100N19TL
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 190V 10A CPT3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RCD100N19TL electronic components. RCD100N19TL can be shipped within 24 hours after order. If you have any demands for RCD100N19TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RCD100N19TL Product Attributes
Part Number :
RCD100N19TL
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 190V 10A CPT3
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
190V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
182 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
850mW (Ta), 20W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
CPT3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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