IRFR3410TRPBF Pricing (USD) [197006pcs Stock]
- 1 pcs$0.18775
- 2,000 pcs$0.17432
- Part Number:
- IRFR3410TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 31A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - RF and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFR3410TRPBF electronic components. IRFR3410TRPBF can be shipped within 24 hours after order. If you have any demands for IRFR3410TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR3410TRPBF Product Attributes
Part Number :
IRFR3410TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 31A DPAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
39 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1690pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta), 110W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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