GeneSiC Semiconductor - GA05JT12-247

KEY Part #: K6412607

GA05JT12-247 Pricing (USD) [13387pcs Stock]

  • 1,260 pcs$2.97443

Part Number:
GA05JT12-247
Manufacturer:
GeneSiC Semiconductor
Detailed description:
TRANS SJT 1200V 5A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor GA05JT12-247 electronic components. GA05JT12-247 can be shipped within 24 hours after order. If you have any demands for GA05JT12-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA05JT12-247 Product Attributes

Part Number : GA05JT12-247
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 1200V 5A
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 280 mOhm @ 5A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 106W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3