SQ1464EEH-T1_GE3 Pricing (USD) [586266pcs Stock]
- 1 pcs$0.06309
- Part Number:
- SQ1464EEH-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 60V SC-70.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - JFETs, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQ1464EEH-T1_GE3 electronic components. SQ1464EEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1464EEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1464EEH-T1_GE3 Product Attributes
Part Number :
SQ1464EEH-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 60V SC-70
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
440mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V
Rds On (Max) @ Id, Vgs :
1.41 Ohm @ 2A, 1.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.1nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
430mW (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-70-6
Package / Case :
6-TSSOP, SC-88, SOT-363
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