TK9P65W,RQ Pricing (USD) [118862pcs Stock]
- 1 pcs$0.31118
- 2,000 pcs$0.30893
- Part Number:
- TK9P65W,RQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 9.3A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK9P65W,RQ electronic components. TK9P65W,RQ can be shipped within 24 hours after order. If you have any demands for TK9P65W,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9P65W,RQ Product Attributes
Part Number :
TK9P65W,RQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 9.3A DPAK
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
560 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
80W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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