Renesas Electronics America - HAT2131R-EL-E

KEY Part #: K6402402

[2716pcs Stock]


    Part Number:
    HAT2131R-EL-E
    Manufacturer:
    Renesas Electronics America
    Detailed description:
    MOSFET N-CH 8SO.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - RF, Transistors - JFETs, Transistors - Special Purpose, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Renesas Electronics America HAT2131R-EL-E electronic components. HAT2131R-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2131R-EL-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HAT2131R-EL-E Product Attributes

    Part Number : HAT2131R-EL-E
    Manufacturer : Renesas Electronics America
    Description : MOSFET N-CH 8SO
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 350V
    Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 3 Ohm @ 450mA, 10V
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 460pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 2.5W (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOP
    Package / Case : 8-SOIC (0.154", 3.90mm Width)