STD15N60M2-EP Pricing (USD) [73080pcs Stock]
- 1 pcs$0.53504
- 2,500 pcs$0.47435
- Part Number:
- STD15N60M2-EP
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 11A EP DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - RF, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STD15N60M2-EP electronic components. STD15N60M2-EP can be shipped within 24 hours after order. If you have any demands for STD15N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD15N60M2-EP Product Attributes
Part Number :
STD15N60M2-EP
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 11A EP DPAK
Series :
MDmesh™ M2-EP
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
378 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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