[137pcs Stock]
- Part Number:
- IPI100N06S3-04
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 55V 100A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPI100N06S3-04 electronic components. IPI100N06S3-04 can be shipped within 24 hours after order. If you have any demands for IPI100N06S3-04, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI100N06S3-04 Product Attributes
Part Number :
IPI100N06S3-04
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 55V 100A TO-262
Series :
OptiMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
314nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14230pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
214W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO262-3
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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