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  5. IRLI610ATU

ON Semiconductor - IRLI610ATU

KEY Part #: K6410865

[13988pcs Stock]

    Part Number:
    IRLI610ATU
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 200V 3.3A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Thyristors - SCRs - Modules ...
    Competitive Advantage:
    We specialize in ON Semiconductor IRLI610ATU electronic components. IRLI610ATU can be shipped within 24 hours after order. If you have any demands for IRLI610ATU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLI610ATU Product Attributes

    Part Number : IRLI610ATU
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 200V 3.3A I2PAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 3.3A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 5V
    Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.65A, 5V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 240pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.1W (Ta), 33W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK (TO-262)
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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