[2469pcs Stock]
- Part Number:
- PMFPB8040XP,115
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET P-CH 20V 2.7A HUSON6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - RF and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMFPB8040XP,115 electronic components. PMFPB8040XP,115 can be shipped within 24 hours after order. If you have any demands for PMFPB8040XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMFPB8040XP,115 Product Attributes
Part Number :
PMFPB8040XP,115
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET P-CH 20V 2.7A HUSON6
Series :
-
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
102 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
485mW (Ta), 6.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-HUSON-EP (2x2)
Package / Case :
6-UDFN Exposed Pad
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