FDD10AN06A0-F085 Pricing (USD) [125860pcs Stock]
- 1 pcs$0.29388
- Part Number:
- FDD10AN06A0-F085
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 11A D-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD10AN06A0-F085 electronic components. FDD10AN06A0-F085 can be shipped within 24 hours after order. If you have any demands for FDD10AN06A0-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD10AN06A0-F085 Product Attributes
Part Number :
FDD10AN06A0-F085
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 11A D-PAK
Series :
Automotive, AEC-Q101, PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
10.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1840pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
135W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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