Toshiba Semiconductor and Storage - TJ50S06M3L(T6L1,NQ

KEY Part #: K6419537

TJ50S06M3L(T6L1,NQ Pricing (USD) [117194pcs Stock]

  • 1 pcs$0.33644
  • 2,000 pcs$0.33477

Part Number:
TJ50S06M3L(T6L1,NQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 60V 50A DPAK-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - Programmable Unijunction, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TJ50S06M3L(T6L1,NQ electronic components. TJ50S06M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ50S06M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TJ50S06M3L(T6L1,NQ Product Attributes

Part Number : TJ50S06M3L(T6L1,NQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 60V 50A DPAK-3
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 13.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 124nC @ 10V
Vgs (Max) : +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds : 6290pF @ 10V
FET Feature : -
Power Dissipation (Max) : 90W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK+
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

You May Also Be Interested In