IRFH8330TRPBF Pricing (USD) [415409pcs Stock]
- 1 pcs$0.08904
- 4,000 pcs$0.07687
- Part Number:
- IRFH8330TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 56A 5X6 PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Diodes - RF, Diodes - Bridge Rectifiers and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH8330TRPBF electronic components. IRFH8330TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8330TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8330TRPBF Product Attributes
Part Number :
IRFH8330TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 56A 5X6 PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
17A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.3W (Ta), 35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PQFN (5x6)
Package / Case :
8-PowerTDFN
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