Toshiba Semiconductor and Storage - TPC6110(TE85L,F,M)

KEY Part #: K6421213

TPC6110(TE85L,F,M) Pricing (USD) [395690pcs Stock]

  • 1 pcs$0.10334
  • 3,000 pcs$0.10283

Part Number:
TPC6110(TE85L,F,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 30V 4.5A VS6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Single, Transistors - JFETs, Transistors - Programmable Unijunction, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPC6110(TE85L,F,M) electronic components. TPC6110(TE85L,F,M) can be shipped within 24 hours after order. If you have any demands for TPC6110(TE85L,F,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC6110(TE85L,F,M) Product Attributes

Part Number : TPC6110(TE85L,F,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 30V 4.5A VS6
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 56 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 510pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6