HUF76609D3ST Pricing (USD) [225667pcs Stock]
- 1 pcs$0.16472
- 2,500 pcs$0.16390
- Part Number:
- HUF76609D3ST
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 10A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Power Driver Modules, Diodes - Zener - Single, Diodes - Rectifiers - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor HUF76609D3ST electronic components. HUF76609D3ST can be shipped within 24 hours after order. If you have any demands for HUF76609D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF76609D3ST Product Attributes
Part Number :
HUF76609D3ST
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 10A DPAK
Series :
UltraFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
425pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
49W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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