TN0106N3-G-P013 Pricing (USD) [146447pcs Stock]
- 1 pcs$0.25876
- 2,000 pcs$0.25747
- Part Number:
- TN0106N3-G-P013
- Manufacturer:
- Microchip Technology
- Detailed description:
- MOSFET N-CH 60V 350MA TO92-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Microchip Technology TN0106N3-G-P013 electronic components. TN0106N3-G-P013 can be shipped within 24 hours after order. If you have any demands for TN0106N3-G-P013, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TN0106N3-G-P013 Product Attributes
Part Number :
TN0106N3-G-P013
Manufacturer :
Microchip Technology
Description :
MOSFET N-CH 60V 350MA TO92-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
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