DMN1150UFL3-7 Pricing (USD) [952744pcs Stock]
- 1 pcs$0.03882
- 3,000 pcs$0.03559
- Part Number:
- DMN1150UFL3-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET 2N-CHA 12V 2A DFN1310.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN1150UFL3-7 electronic components. DMN1150UFL3-7 can be shipped within 24 hours after order. If you have any demands for DMN1150UFL3-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1150UFL3-7 Product Attributes
Part Number :
DMN1150UFL3-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET 2N-CHA 12V 2A DFN1310
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
2A
Rds On (Max) @ Id, Vgs :
150 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
115pF @ 6V
Power - Max :
390mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-XFDFN Exposed Pad
Supplier Device Package :
X2-DFN1310-6 (Type B)
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