Toshiba Semiconductor and Storage - SSM6N35FE,LM

KEY Part #: K6525529

SSM6N35FE,LM Pricing (USD) [1336019pcs Stock]

  • 1 pcs$0.03061
  • 4,000 pcs$0.03045

Part Number:
SSM6N35FE,LM
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 20V 0.18A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - IGBTs - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6N35FE,LM electronic components. SSM6N35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N35FE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N35FE,LM Product Attributes

Part Number : SSM6N35FE,LM
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 20V 0.18A ES6
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 180mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 3V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6 (1.6x1.6)

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