Infineon Technologies - FS45MR12W1M1B11BOMA1

KEY Part #: K6522812

FS45MR12W1M1B11BOMA1 Pricing (USD) [665pcs Stock]

  • 1 pcs$69.78699

Part Number:
FS45MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET MODULE 1200V 50A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers and Diodes - RF ...
Competitive Advantage:
We specialize in Infineon Technologies FS45MR12W1M1B11BOMA1 electronic components. FS45MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FS45MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FS45MR12W1M1B11BOMA1 Product Attributes

Part Number : FS45MR12W1M1B11BOMA1
Manufacturer : Infineon Technologies
Description : MOSFET MODULE 1200V 50A
Series : CoolSiC™
Part Status : Active
FET Type : 6 N-Channel (3-Phase Bridge)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 25A (Tj)
Rds On (Max) @ Id, Vgs : 45 mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id : 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 1840pF @ 800V
Power - Max : 20mW (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : AG-EASY1BM-2