Infineon Technologies - BSC0923NDIATMA1

KEY Part #: K6525311

BSC0923NDIATMA1 Pricing (USD) [185285pcs Stock]

  • 1 pcs$0.19962
  • 5,000 pcs$0.19164

Part Number:
BSC0923NDIATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET 2N-CH 30V 17A/32A TISON8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Infineon Technologies BSC0923NDIATMA1 electronic components. BSC0923NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC0923NDIATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC0923NDIATMA1 Product Attributes

Part Number : BSC0923NDIATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 30V 17A/32A TISON8
Series : OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 17A, 32A
Rds On (Max) @ Id, Vgs : 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1160pF @ 15V
Power - Max : 1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : PG-TISON-8