SI6562CDQ-T1-GE3 Pricing (USD) [193304pcs Stock]
- 1 pcs$0.19134
- 3,000 pcs$0.17968
- Part Number:
- SI6562CDQ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N/P-CH 20V 6.7A 8-TSSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI6562CDQ-T1-GE3 electronic components. SI6562CDQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562CDQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6562CDQ-T1-GE3 Product Attributes
Part Number :
SI6562CDQ-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 20V 6.7A 8-TSSOP
Series :
TrenchFET®
Part Status :
Active
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
6.7A, 6.1A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 10V
Power - Max :
1.6W, 1.7W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package :
8-TSSOP
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