SQJ244EP-T1_GE3 Pricing (USD) [144991pcs Stock]
- 1 pcs$0.25510
- Part Number:
- SQJ244EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL N-CHA 40V PPAK SO-8L.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - JFETs, Thyristors - DIACs, SIDACs and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQJ244EP-T1_GE3 electronic components. SQJ244EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ244EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ244EP-T1_GE3 Product Attributes
Part Number :
SQJ244EP-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CHA 40V PPAK SO-8L
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual) Asymmetrical
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V, 2800pF @ 25V
Power - Max :
27W (Tc), 48W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® SO-8 Dual
Supplier Device Package :
PowerPAK® SO-8 Dual Asymmetric
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