SQ4917EY-T1_GE3 Pricing (USD) [98339pcs Stock]
- 1 pcs$0.39761
- 2,500 pcs$0.31715
- Part Number:
- SQ4917EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 P-CHANNEL 60V 8A 8SO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQ4917EY-T1_GE3 electronic components. SQ4917EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4917EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4917EY-T1_GE3 Product Attributes
Part Number :
SQ4917EY-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 P-CHANNEL 60V 8A 8SO
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
2 P-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Rds On (Max) @ Id, Vgs :
48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1910pF @ 30V
Power - Max :
5W (Tc)
Operating Temperature :
-55°C ~ 175°C (TA)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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