IPG20N10S4L35AATMA1 Pricing (USD) [182536pcs Stock]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Part Number:
- IPG20N10S4L35AATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Product Attributes
Part Number :
IPG20N10S4L35AATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 8TDSON
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
20A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs :
17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1105pF @ 25V
Power - Max :
43W
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerVDFN
Supplier Device Package :
PG-TDSON-8-10
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