PHKD3NQ10T,518 Pricing (USD) [4147pcs Stock]
- 10,000 pcs$0.23477
- Part Number:
- PHKD3NQ10T,518
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET 2N-CH 100V 3A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PHKD3NQ10T,518 electronic components. PHKD3NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHKD3NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD3NQ10T,518 Product Attributes
Part Number :
PHKD3NQ10T,518
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET 2N-CH 100V 3A 8SOIC
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
3A
Rds On (Max) @ Id, Vgs :
90 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
633pF @ 20V
Power - Max :
2W
Operating Temperature :
-65°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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