IRFHM8363TRPBF Pricing (USD) [242912pcs Stock]
- 1 pcs$0.15227
- 4,000 pcs$0.15140
- Part Number:
- IRFHM8363TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFHM8363TRPBF electronic components. IRFHM8363TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TRPBF Product Attributes
Part Number :
IRFHM8363TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 30V 11A 8PQFN
Series :
HEXFET®
Part Status :
Not For New Designs
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
11A
Rds On (Max) @ Id, Vgs :
14.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1165pF @ 10V
Power - Max :
2.7W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerVDFN
Supplier Device Package :
8-PQFN (3.3x3.3), Power33
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